Invention Grant
- Patent Title: Methods of fabricating semiconductor devices having resistors
- Patent Title (中): 制造具有电阻器的半导体器件的方法
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Application No.: US12248470Application Date: 2008-10-09
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Publication No.: US07871890B2Publication Date: 2011-01-18
- Inventor: Dae-Won Ha , Sang-Yoon Kim
- Applicant: Dae-Won Ha , Sang-Yoon Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2007-0102007 20071010
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
A semiconductor device having a resistor and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate having a first circuit region and a second circuit region. A lower interlayer insulating layer is provided over the semiconductor substrate. A first hole passing through the lower interlayer insulating layer in the first circuit region and a second hole passing through the lower interlayer insulating layer in the second circuit region are provided. A first semiconductor pattern and a second semiconductor pattern are sequentially stacked in the first hole. A first resistor having the same crystalline structure as the second semiconductor pattern is provided in the second hole.
Public/Granted literature
- US20090098703A1 METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING RESISTORS Public/Granted day:2009-04-16
Information query
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