Various methods for forming active electronic devices, such as field-effect transistors, and devices made using these methods are disclosed. Some of the methods include growing freestanding nano-, micro- and milli-scale semiconducting structures that are used for the active semiconducting channels of the active electronic devices. Others of the methods include forming strands of active electronic devices along a wire. Yet others of the methods utilize both of these concepts so that the active electronic devices on a particular strand include freestanding semiconducting structures.