Invention Grant
US07871931B2 Method for chemical mechanical planarization of a metal layer located over a photoresist layer and a method for manufacturing a micro pixel array using the same
有权
位于光致抗蚀剂层之上的金属层的化学机械平面化方法以及使用该方法制造微型像素阵列的方法
- Patent Title: Method for chemical mechanical planarization of a metal layer located over a photoresist layer and a method for manufacturing a micro pixel array using the same
- Patent Title (中): 位于光致抗蚀剂层之上的金属层的化学机械平面化方法以及使用该方法制造微型像素阵列的方法
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Application No.: US11231249Application Date: 2005-09-20
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Publication No.: US07871931B2Publication Date: 2011-01-18
- Inventor: Anthony DiCarlo , Jingqiu Chen , Yanghua He , James C. Baker , David A. Rothenbury
- Applicant: Anthony DiCarlo , Jingqiu Chen , Yanghua He , James C. Baker , David A. Rothenbury
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Charles A. Brill; Wade James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
The present invention provides a method for planarizing a metal layer, and a method for manufacturing a micro pixel array. The method for planarizing the metal layer, without limitation, may include the steps of forming a metal layer over a photoresist layer, and then planarizing the metal layer using a chemical mechanical planarization process.
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