Invention Grant
- Patent Title: Photovoltaic device
- Patent Title (中): 光伏装置
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Application No.: US11092840Application Date: 2005-03-30
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Publication No.: US07872194B2Publication Date: 2011-01-18
- Inventor: Takeshi Nakashima , Eiji Maruyama
- Applicant: Takeshi Nakashima , Eiji Maruyama
- Applicant Address: JP Osaka
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2004-283926 20040929
- Main IPC: H01L31/0236
- IPC: H01L31/0236 ; H01L31/0216 ; H01L31/04

Abstract:
The present invention provides a photovoltaic device having excellent environmental durability and good adhesion with a collector electrode made of metal paste. The photovoltaic device comprises an ITO film on a p-type amorphous silicon hydride film on a light incident side of the photovoltaic device and a collector electrode made of silver paste on the ITO film. A silicon oxide insulation film made of SiOx is provided on at least regions on the ITO film where the collector electrode is not formed. The thickness of the silicon oxide insulation film is about 1 to 10 times thicker than an arithmetic mean deviation (Ra) of the underlying ITO film. The silicon oxide insulation film is a film having a Si-2p peak with a full width at half maximum of 2.45 or less, which is evaluated by an X-ray photoelectron spectroscopy.
Public/Granted literature
- US20060065298A1 Photovoltaic device Public/Granted day:2006-03-30
Information query
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