Invention Grant
- Patent Title: Light emitting diode and manufacturing method thereof
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US12331840Application Date: 2008-12-10
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Publication No.: US07872267B2Publication Date: 2011-01-18
- Inventor: Shih Hsiung Chan , Chih Chiang Huang
- Applicant: Shih Hsiung Chan , Chih Chiang Huang
- Applicant Address: TW Hsinchu Hsien
- Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee Address: TW Hsinchu Hsien
- Agent Raymond J. Chew
- Priority: TW96147358A 20071212
- Main IPC: H01L27/15
- IPC: H01L27/15
Abstract:
A light emitting diode comprises a substrate having a first surface and a second surface, a light emitting epitaxy structure placed on the first surface of the substrate, and a compound reflection layer placed on the second surface of the substrate. The second surface of the substrate further has a protection structure.
Public/Granted literature
- US20090152577A1 LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF Public/Granted day:2009-06-18
Information query
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