Invention Grant
US07872284B2 Pixel with strained silicon layer for improving carrier mobility and blue response in imagers
有权
具有应变硅层的像素，用于改善成像器中的载流子迁移率和蓝色响应
- Patent Title: Pixel with strained silicon layer for improving carrier mobility and blue response in imagers
- Patent Title (中): 具有应变硅层的像素，用于改善成像器中的载流子迁移率和蓝色响应
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Application No.: US12344740Application Date: 2008-12-29
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Publication No.: US07872284B2Publication Date: 2011-01-18
- Inventor: Chandra Mouli
- Applicant: Chandra Mouli
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L27/148
- IPC: H01L27/148
Abstract:
An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices.
Public/Granted literature
- US20090146153A1 PIXEL WITH STRAINED SILICON LAYER FOR IMPROVING CARRIER MOBILITY AND BLUE RESPONSE IN IMAGERS Public/Granted day:2009-06-11
Information query
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