Invention Grant
US07872305B2 Shielded gate trench FET with an inter-electrode dielectric having a nitride layer therein
有权
屏蔽栅沟槽FET，其中具有氮化物层的电极间电介质
- Patent Title: Shielded gate trench FET with an inter-electrode dielectric having a nitride layer therein
- Patent Title (中): 屏蔽栅沟槽FET，其中具有氮化物层的电极间电介质
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Application No.: US12146791Application Date: 2008-06-26
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Publication No.: US07872305B2Publication Date: 2011-01-18
- Inventor: Scott L. Hunt
- Applicant: Scott L. Hunt
- Applicant Address: US ME South Portland
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US ME South Portland
- Agency: Townsend and Townsend and Crew LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
A shielded gate field effect transistor (FET) comprises a plurality of trenches extending into a semiconductor region. A shield electrode is disposed in a bottom portion of each trench, and a gate electrode is disposed over the shield electrode in each trench. An inter-electrode dielectric (IED) extends between the shield electrode and the gate electrode. The IED comprises a first oxide layer and a nitride layer over the first oxide layer.
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