Invention Grant
US07872334B2 Carbon nanotube diodes and electrostatic discharge circuits and methods
有权
碳纳米管二极管和静电放电电路及方法
- Patent Title: Carbon nanotube diodes and electrostatic discharge circuits and methods
- Patent Title (中): 碳纳米管二极管和静电放电电路及方法
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Application No.: US11744234Application Date: 2007-05-04
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Publication No.: US07872334B2Publication Date: 2011-01-18
- Inventor: Jia Chen , Steven Howard Voldman
- Applicant: Jia Chen , Steven Howard Voldman
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Richard M. Kotulak
- Main IPC: H01L51/30
- IPC: H01L51/30
Abstract:
Diodes and method of fabricating diodes. A diode includes: an p-type single wall carbon nanotube; an n-type single wall carbon nanotube, the p-type single wall carbon nanotube in physical and electrical contact with the n-type single wall carbon nanotube; and a first metal pad in physical and electrical contact with the p-type single wall carbon nanotube and a second metal pad in physical and electrical contact with the n-type single wall carbon nanotube.
Public/Granted literature
- US20080273280A1 Carbon Nanotube Diodes And Electrostatic Discharge Circuits And Methods Public/Granted day:2008-11-06
Information query
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