Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12362644Application Date: 2009-01-30
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Publication No.: US07872500B2Publication Date: 2011-01-18
- Inventor: Tadao Seto
- Applicant: Tadao Seto
- Applicant Address: JP Toyko
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Toyko
- Agency: Sprinkle IP Law Group
- Priority: JP2008-019304 20080130
- Main IPC: H03K19/0175
- IPC: H03K19/0175

Abstract:
According to an aspect of the present invention, there is provided a semiconductor device including: a first circuit portion including: a first circuit that is connected between a first high-side power line and a low-side power line and that outputs a second signal based on a first signal input thereto; and a second circuit portion including: a first transistor that is connected between a second high-side power line and a node and that has a normally-on characteristic; a second circuit that is connected between the node and the low-side power line and that outputs a third signal based on the second signal input thereto.
Public/Granted literature
- US20090189640A1 Semiconductor Device Public/Granted day:2009-07-30
Information query
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