Invention Grant
- Patent Title: Programmable semiconductor device
- Patent Title (中): 可编程半导体器件
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Application No.: US10552971Application Date: 2003-04-30
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Publication No.: US07872897B2Publication Date: 2011-01-18
- Inventor: William R. Tonti , Wayne S. Berry , John A. Fifield , William H. Guthrie , Richard S. Kontra
- Applicant: William R. Tonti , Wayne S. Berry , John A. Fifield , William H. Guthrie , Richard S. Kontra
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Joseph P. Abate, Esq.
- International Application: PCT/US03/13392 WO 20030430
- International Announcement: WO2004/100271 WO 20041118
- Main IPC: G11C17/00
- IPC: G11C17/00

Abstract:
A programmable device includes a substrate (10); an insulator (13) on the substrate; an elongated semiconductor material (12) on the insulator, the elongated semiconductor material having first and second ends, and an upper surface S; the first end (12a) is substantially wider than the second end (12b), and a metallic material is disposed on the upper surface; the metallic material being physically migratable along the upper surface responsive to an electrical current I flowable through the semiconductor material and the metallic material.
Public/Granted literature
- US20070242548A1 Programmable Semiconductor Device Public/Granted day:2007-10-18
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