Invention Grant
- Patent Title: Phase change memory devices and fabrication methods thereof
- Patent Title (中): 相变存储器件及其制造方法
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Application No.: US12461187Application Date: 2009-08-04
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Publication No.: US07872908B2Publication Date: 2011-01-18
- Inventor: Dong-Seok Suh , Yoon-Ho Khang , Jin-Seo Noh , Vassili Leniachine , Mi-Jeong Song
- Applicant: Dong-Seok Suh , Yoon-Ho Khang , Jin-Seo Noh , Vassili Leniachine , Mi-Jeong Song
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2005-0013531 20050218
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
In a memory device, a transistor may be formed on a substrate, and a first electrode may be electrically connected thereto. A phase change material film may be vertically formed on the first electrode, and a second electrode may be formed on the phase change material film.
Public/Granted literature
- US20090289241A1 Phase change memory devices and fabrication methods thereof Public/Granted day:2009-11-26
Information query
