Invention Grant
- Patent Title: Accessing memory cells in a memory circuit
- Patent Title (中): 访问存储器电路中的存储单元
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Application No.: US12431280Application Date: 2009-04-28
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Publication No.: US07872929B2Publication Date: 2011-01-18
- Inventor: Richard Bruce Dell , Ross A. Kohler , Richard J. McPartland , Wayne E. Werner
- Applicant: Richard Bruce Dell , Ross A. Kohler , Richard J. McPartland , Wayne E. Werner
- Applicant Address: US CA Milpitas
- Assignee: LSI Corporation
- Current Assignee: LSI Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Ryan, Mason & Lewis, LLP
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
Techniques for accessing a memory cell in a memory circuit include: receiving a request to access a selected memory cell in the memory circuit; determining whether the selected memory cell corresponds to a normal memory cell or a weak memory cell in the memory circuit; accessing the selected memory cell using a first set of control parameters when the selected memory cell corresponds to a normal memory cell, wherein the selected memory cell provides correct data under prescribed operating specifications when accessed using the first set of control parameters; and accessing the selected memory cell using a second set of control parameters when the selected memory cell corresponds to a weak memory cell, wherein the selected memory cell provides correct data under the prescribed operating specifications when accessed using the second set of control parameters and provides incorrect data under the prescribed operating specifications when accessed using the first set of control parameters.
Public/Granted literature
- US20100271891A1 Accessing Memory Cells in a Memory Circuit Public/Granted day:2010-10-28
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