Invention Grant
- Patent Title: Semiconductor device and method for writing data into memory
- Patent Title (中): 用于将数据写入存储器的半导体器件和方法
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Application No.: US12326120Application Date: 2008-12-02
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Publication No.: US07872934B2Publication Date: 2011-01-18
- Inventor: Hajime Tokunaga
- Applicant: Hajime Tokunaga
- Applicant Address: JP Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-Ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2007-323224 20071214
- Main IPC: G11C17/18
- IPC: G11C17/18

Abstract:
It is an object to provide memory and a semiconductor device in which falsification of data written thereinto is prevented. The memory includes a memory circuit, a writing circuit, and a reading circuit. The memory circuit has a memory cell array in which a plurality of memory cells where “0” and “1” of binary data can be written are arranged. The writing circuit includes a first writing circuit which writes one of “0” and “1” of binary data into one of the memory cells included in the memory circuit, and a second writing circuit which writes the other of “0” and “1” of binary data into one of the memory cells included in the memory circuit.
Public/Granted literature
- US20090154262A1 SEMICONDUCTOR DEVICE AND METHOD FOR WRITING DATA INTO MEMORY Public/Granted day:2009-06-18
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