Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12005551Application Date: 2007-12-26
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Publication No.: US07872939B2Publication Date: 2011-01-18
- Inventor: Beom-Ju Shin
- Applicant: Beom-Ju Shin
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: KR10-2007-0046379 20070514
- Main IPC: G11C8/00
- IPC: G11C8/00
Abstract:
A semiconductor memory device includes: a first address buffer configured to be used in a test mode and a normal mode and to receive more addresses in the test mode than in the normal mode; and a second address buffer configured to be used in the normal mode and disabled in the test mode.
Public/Granted literature
- US20080285374A1 Semiconductor memory device Public/Granted day:2008-11-20
Information query
