Invention Grant
- Patent Title: Semiconductor memory device and method for testing the same
- Patent Title (中): 半导体存储器件及其测试方法
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Application No.: US12154943Application Date: 2008-05-28
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Publication No.: US07872940B2Publication Date: 2011-01-18
- Inventor: Ki-Chang Kwean
- Applicant: Ki-Chang Kwean
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: KR10-2007-0128812 20071212
- Main IPC: G11C8/00
- IPC: G11C8/00
Abstract:
Semiconductor memory device and method for testing the same includes a unit for characterized in that a burst length is increased in a test of a read operation and a write operation and a unit for connecting a plurality of banks to one data pad by sequentially and outputting the data.
Public/Granted literature
- US20090154271A1 Semiconductor memory device and method for testing the same Public/Granted day:2009-06-18
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