Invention Grant
- Patent Title: Method and apparatus for reviewing defects of semiconductor device
- Patent Title (中): 检查半导体器件缺陷的方法和装置
-
Application No.: US11488636Application Date: 2006-07-19
-
Publication No.: US07873202B2Publication Date: 2011-01-18
- Inventor: Masaki Kurihara , Toshifumi Honda , Ryo Nakagaki
- Applicant: Masaki Kurihara , Toshifumi Honda , Ryo Nakagaki
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2005-227374 20050805
- Main IPC: G06K9/00
- IPC: G06K9/00

Abstract:
An apparatus for reviewing defects of a semiconductor device is provided to review a lot of defects in a short period of time thereby to improve the efficiency of defect review. A method for reviewing defects of a semiconductor device includes obtaining an image including a defect on the semiconductor device detected by a detection device by use of a scanning electron microscope at a first magnification, making a reference image from the image including the defect obtained at the first magnification, detecting the defect by comparing the image including the defect obtained at the first magnification to the reference image made from the image including the defect at the first magnification, and taking an image of the detected defect at a second magnification that is larger than the first magnification.
Public/Granted literature
- US20070031026A1 Method and apparatus for reviewing defects of semiconductor device Public/Granted day:2007-02-08
Information query