Invention Grant
- Patent Title: Apparatus and methods for predicting a semiconductor parameter across an area of a wafer
- Patent Title (中): 用于预测跨晶片区域的半导体参数的装置和方法
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Application No.: US11955262Application Date: 2007-12-12
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Publication No.: US07873585B2Publication Date: 2011-01-18
- Inventor: Pavel Izikson
- Applicant: Pavel Izikson
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Technologies Corporation
- Current Assignee: KLA-Tencor Technologies Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: G06F15/18
- IPC: G06F15/18 ; G06E1/00 ; G06E3/00 ; G06G7/00

Abstract:
Apparatus and methods are provided for predicting a plurality of unknown parameter values (e.g. overlay error or critical dimension) using a plurality of known parameter values. In one embodiment, the method involves training a neural network to predict the plurality of parameter values. In other embodiments, the prediction process does not depend on an optical property of a photolithography tool. Such predictions may be used to determine wafer lot disposition.
Public/Granted literature
- US20090063378A1 APPARATUS AND METHODS FOR PREDICTING A SEMICONDUCTOR PARAMETER ACROSS AN AREA OF A WAFER Public/Granted day:2009-03-05
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