Invention Grant
- Patent Title: Flash memory system, host system for programming the flash memory system, and programming method thereor
- Patent Title (中): 闪存系统,用于编程闪存系统的主机系统及其编程方法
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Application No.: US11698133Application Date: 2007-01-26
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Publication No.: US07873777B2Publication Date: 2011-01-18
- Inventor: Shin-wook Kang
- Applicant: Shin-wook Kang
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2006-0052589 20060612
- Main IPC: G06F12/02
- IPC: G06F12/02

Abstract:
Provided are a multi-channel flash memory system capable of increasing the overall bandwidth by using a plurality of flash memory chips, and a programming method performed in the flash memory system. The flash memory system includes: a plurality of channel units each including at least two flash memory chips, a control unit which controls the flash memory chips, and a buffer unit which stores external data; and a host interface unit which transmits data separated according to the number of the channel units and transmitted by a host to the buffer units of the channel units, wherein the control unit records the data stored in the buffer unit into the at least two flash memory chips.
Public/Granted literature
- US20070288688A1 Flash memory system, host system for programming the flash memory system, and programming method thereor Public/Granted day:2007-12-13
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