Invention Grant
- Patent Title: High performance pulsed storage circuit
- Patent Title (中): 高性能脉冲存储电路
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Application No.: US12285327Application Date: 2008-10-01
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Publication No.: US07873896B2Publication Date: 2011-01-18
- Inventor: Chih-Wei Huang , Marlin Wayne Frederick, Jr. , Stephen Andrew Kvinta , Kerry Karl Nick
- Applicant: Chih-Wei Huang , Marlin Wayne Frederick, Jr. , Stephen Andrew Kvinta , Kerry Karl Nick
- Applicant Address: GB Cambridge
- Assignee: ARM Limited
- Current Assignee: ARM Limited
- Current Assignee Address: GB Cambridge
- Agency: Nixon & Vanderhye P.C.
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
The application discloses storage circuitry with a pulse generator used to control switches on two inputs to the storage circuitry thereby connecting either operational data or diagnostic data to the storage circuitry. Thus, the pulse generator selects the data paths by outputting pulses to a diagnostic output or to a functional output, and these pulses controlling the switches on the two inputs to the storage circuitry.
Public/Granted literature
- US20100083062A1 High performance pulsed storage circuit Public/Granted day:2010-04-01
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