Invention Grant
- Patent Title: Method of manufacturing light emitting diode device
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Application No.: US12615262Application Date: 2009-11-09
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Publication No.: US07875472B2Publication Date: 2011-01-25
- Inventor: Ben Fan , Hsin-Chuan Weng , Kuo-Kuang Yeh
- Applicant: Ben Fan , Hsin-Chuan Weng , Kuo-Kuang Yeh
- Applicant Address: CN He Shan, Guangdong
- Assignee: He Shan Lide Electronic Enterprise Company Ltd.
- Current Assignee: He Shan Lide Electronic Enterprise Company Ltd.
- Current Assignee Address: CN He Shan, Guangdong
- Agency: patenttm.us
- Priority: CN200810026479 20080225
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified.
Public/Granted literature
- US20100055814A1 METHOD OF MANUFACTURING LIGHT EMITTING DIODE DEVICE Public/Granted day:2010-03-04
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