Invention Grant
US07875478B2 Method for controlling color contrast of a multi-wavelength light-emitting diode
失效
用于控制多波长发光二极管的色对比度的方法
- Patent Title: Method for controlling color contrast of a multi-wavelength light-emitting diode
- Patent Title (中): 用于控制多波长发光二极管的色对比度的方法
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Application No.: US11819175Application Date: 2007-06-26
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Publication No.: US07875478B2Publication Date: 2011-01-25
- Inventor: Dong-Ming Yeh , Horng-Shyang Chen , Chih-Feng Lu , Chi-Feng Huang , Tsung-Yi Tang , Jian-Jang Huang , Yen-Cheng Lu , Chih-Chung Yang , Jeng-Jie Huang , Yung-Sheng Chen
- Applicant: Dong-Ming Yeh , Horng-Shyang Chen , Chih-Feng Lu , Chi-Feng Huang , Tsung-Yi Tang , Jian-Jang Huang , Yen-Cheng Lu , Chih-Chung Yang , Jeng-Jie Huang , Yung-Sheng Chen
- Applicant Address: TW Taipei
- Assignee: National Taiwan University
- Current Assignee: National Taiwan University
- Current Assignee Address: TW Taipei
- Agency: Rosenberg, Klein & Lee
- Priority: TW95141375A 20060811
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.
Public/Granted literature
- US20080035909A1 Method for controlling color contrast of a multi-wavelength light-emitting diode Public/Granted day:2008-02-14
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