Invention Grant
- Patent Title: Etching method and manufacturing method of semiconductor device
- Patent Title (中): 半导体器件的蚀刻方法和制造方法
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Application No.: US11663809Application Date: 2005-10-07
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Publication No.: US07875506B2Publication Date: 2011-01-25
- Inventor: Shinya Sasagawa , Shigeharu Monoe
- Applicant: Shinya Sasagawa , Shigeharu Monoe
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-298977 20041013
- International Application: PCT/JP2005/018910 WO 20051007
- International Announcement: WO2006/041144 WO 20060420
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention discloses technique of etching selectively a layer containing siloxane. The present invention provides a semiconductor device with reduced operation deterioration due to etching failure. A method for manufacturing a semiconductor device comprises steps of forming a conductive layer electrically connecting to a transistor, an insulating layer covering the conductive layer, and a mask formed over the insulating layer; and etching the insulating layer with a processing gas including a hydrogen bromide gas.
Public/Granted literature
- US20070264825A1 Etching Method and Manufacturing Method of Semiconductor Device Public/Granted day:2007-11-15
Information query
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