Method for manufacturing semiconductor device

Invention Grant

US07875512B2 Method for manufacturing semiconductor device 有权

Title translation: 制造半导体器件的方法

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Patent Title: Method for manufacturing semiconductor device
Patent Title (中): 制造半导体器件的方法
Application No.: US12355144

Application Date: 2009-01-16
Publication No.: US07875512B2

Publication Date: 2011-01-25
Inventor: Akiko Nomachi
Applicant: Akiko Nomachi
Applicant Address: JP Tokyo
Assignee: Kabushiki Kaisha Toshiba
Current Assignee: Kabushiki Kaisha Toshiba
Current Assignee Address: JP Tokyo
Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Priority: JPP2008-010344 20080121
Main IPC: H01L21/8238
IPC: H01L21/8238

Method for manufacturing semiconductor device

Abstract:

According to an aspect of the present invention, there is provided a method for manufacturing a semiconductor device, the method including: forming a first region and a second region in a semiconductor substrate by forming an element isolation region; forming an insulating film on the semiconductor substrate in the first region and the second region; forming a first metal film on the insulating film in the first region and in the second region; removing the first metal film in the second region; forming a second metal film on the first metal film in the first region and on the insulating film in the second region; and flattening top surfaces in the first region and the second region by performing a flattening process.

Abstract(Chinese):

根据本发明的一个方面，提供一种制造半导体器件的方法，该方法包括：通过形成元件隔离区域在半导体衬底中形成第一区域和第二区域; 在所述第一区域和所述第二区域中的所述半导体衬底上形成绝缘膜; 在第一区域和第二区域中的绝缘膜上形成第一金属膜; 去除第二区域中的第一金属膜; 在第一区域的第一金属膜上和第二区域中的绝缘膜上形成第二金属膜; 并通过进行平坦化处理使第一区域和第二区域中的顶表面变平。

Public/Granted literature

US20090186472A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2009-07-23

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS