Invention Grant
- Patent Title: Precursors for CVD silicon carbo-nitride and silicon nitride films
- Patent Title (中): CVD硅碳氮化物和氮化硅膜的前体
-
Application No.: US11129862Application Date: 2005-05-16
-
Publication No.: US07875556B2Publication Date: 2011-01-25
- Inventor: Manchao Xiao , Arthur Kenneth Hochberg
- Applicant: Manchao Xiao , Arthur Kenneth Hochberg
- Applicant Address: US PA Allentown
- Assignee: Air Products and Chemicals, Inc.
- Current Assignee: Air Products and Chemicals, Inc.
- Current Assignee Address: US PA Allentown
- Agent Rosaleen P. Morris-Oskanian
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films.The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.
Public/Granted literature
- US20060258173A1 Precursors for CVD silicon carbo-nitride films Public/Granted day:2006-11-16
Information query
IPC分类: