Invention Grant
- Patent Title: Semiconductor substrate treating method, semiconductor component and electronic appliance
- Patent Title (中): 半导体衬底处理方法，半导体元件和电子设备
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Application No.: US11313255Application Date: 2005-12-20
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Publication No.: US07875557B2Publication Date: 2011-01-25
- Inventor: Hiroyuki Matsuo , Kunihiro Miyazaki , Toshiki Nakajima
- Applicant: Hiroyuki Matsuo , Kunihiro Miyazaki , Toshiki Nakajima
- Applicant Address: JP JP
- Assignee: Seiko Epson Corporation,Kabushiki Kaisha Toshiba
- Current Assignee: Seiko Epson Corporation,Kabushiki Kaisha Toshiba
- Current Assignee Address: JP JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2004-370228 20041221; JP2005-274764 20050921
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A semiconductor substrate treating method is disclosed that can selectively remove contaminants or unnecessary substances present on the surface of a semiconductor substrate. Also disclosed are a semiconductor component of enhanced reliability produced by this method and an electronic appliance incorporating the semiconductor component. The semiconductor substrate treating method comprises the step of treating a semiconductor substrate with a treating fluid containing NH4OH and HF wherein the relationships 0.30≦X/Y≦0.78 and 0.03≦Y≦6.0 are satisfied, where X represents a concentration [mol/L] of NH4OH in the treating fluid and Y represents a concentration [mol/L] of HF in the treating fluid. Preferably, the treating fluid is substantially free from H2O2. The semiconductor substrate has a surface, at least a part of which is composed of high melting point metal.
Public/Granted literature
- US20060144421A1 Semiconductor substrate treating method, semiconductor component and electronic appliance Public/Granted day:2006-07-06
Information query
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