Invention Grant
- Patent Title: Semiconductor light emitting device and method of manufacturing the same
- Patent Title (中): 半导体发光器件及其制造方法
-
Application No.: US12669026Application Date: 2008-07-25
-
Publication No.: US07875874B2Publication Date: 2011-01-25
- Inventor: Ho Sang Yoon , Sang Kyun Shim
- Applicant: Ho Sang Yoon , Sang Kyun Shim
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2007-0075908 20070727
- International Application: PCT/KR2008/004359 WO 20080725
- International Announcement: WO2009/017338 WO 20090205
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a first semiconductor layer emitting electrons, a second semiconductor layer emitting holes, and an active layer emitting light by combination of the electrons and holes. At least one of the layers comprises an photo enhanced minority carriers.
Public/Granted literature
- US20100187495A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-07-29
Information query
IPC分类:
