Integrated circuit comprising a photodiode of the floating substrate type and corresponding fabrication process

Invention Grant

US07875915B2 Integrated circuit comprising a photodiode of the floating substrate type and corresponding fabrication process 有权

Title translation: 集成电路包括浮置衬底类型的光电二极管和相应的制造工艺

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Patent Title: Integrated circuit comprising a photodiode of the floating substrate type and corresponding fabrication process
Patent Title (中): 集成电路包括浮置衬底类型的光电二极管和相应的制造工艺
Application No.: US11432675

Application Date: 2006-05-10
Publication No.: US07875915B2

Publication Date: 2011-01-25
Inventor: François Roy , Arnaud Tournier
Applicant: François Roy , Arnaud Tournier
Applicant Address: FR Montrouge
Assignee: STMicroelectronics S.A.
Current Assignee: STMicroelectronics S.A.
Current Assignee Address: FR Montrouge
Agency: Gardere Wynne Sewell LLP
Priority: FR0504835 20050513
Main IPC: H01L31/062
IPC: H01L31/062 ; H01L31/113

Integrated circuit comprising a photodiode of the floating substrate type and corresponding fabrication process

Abstract:

An integrated circuit includes at least one photodiode associated with a read transistor. The photodiode is formed from a stack of three semiconductor layers comprising a buried layer, an floating substrate layer and an upper layer. The drain region and/or the source region of the transistor are incorporated within the upper layer. The buried layer is electrically isolated from the upper layer so as to allow the buried layer to be biased independently of the upper layer.

Abstract(Chinese):

集成电路包括与读取晶体管相关联的至少一个光电二极管。光电二极管由包括掩埋层，浮置衬底层和上层的三个半导体层的堆叠形成。晶体管的漏极区域和/或源极区域被并入上层。掩埋层与上层电隔离，以便允许掩埋层独立于上层被偏置。

Public/Granted literature

US20060255371A1 Integrated circuit comprising a photodiode of the floating substrate type and corresponding fabrication process Public/Granted day:2006-11-16

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/04	.用作光伏〔PV〕转换器件（制造中其测试入H01L21/66；制造之后其测试入H02S50/10）
H01L31/06	..以至少有一个电位跃变势垒或表面势垒为特征的
H01L31/062	...只是金属—绝缘体—半导体型势垒的