Invention Grant
US07875916B2 Photodetector and n-layer structure for improved collection efficiency
有权
光电检测器和n层结构，提高收集效率
- Patent Title: Photodetector and n-layer structure for improved collection efficiency
- Patent Title (中): 光电检测器和n层结构，提高收集效率
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Application No.: US11453354Application Date: 2006-06-15
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Publication No.: US07875916B2Publication Date: 2011-01-25
- Inventor: Eric G. Stevens , David N. Nichols
- Applicant: Eric G. Stevens , David N. Nichols
- Applicant Address: US NY Rochester
- Assignee: Eastman Kodak Company
- Current Assignee: Eastman Kodak Company
- Current Assignee Address: US NY Rochester
- Agent Peyton C. Watkins; Nancy R. Simon
- Main IPC: H01L31/062
- IPC: H01L31/062
Abstract:
An image sensor with an image area having a plurality of photodetectors of a first conductivity type includes a substrate of the second conductivity type; a first layer of the first conductivity type spanning the image area; a second layer of the second conductivity type; wherein the first layer is between the substrate and the second layer, and the plurality of photodetectors is disposed in the second layer and abut the first layer.
Public/Granted literature
- US20070069315A1 Photodetector and n-layer structure for improved collection efficiency Public/Granted day:2007-03-29
Information query
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