Invention Grant
- Patent Title: Semiconductor structure having an enlarged finger shaped region for reducing electric field density and method of manufacturing the same
- Patent Title (中): 具有用于降低电场密度的扩大的手指形状区域的半导体结构及其制造方法
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Application No.: US12371852Application Date: 2009-02-16
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Publication No.: US07875930B2Publication Date: 2011-01-25
- Inventor: Hung-Shern Tsai
- Applicant: Hung-Shern Tsai
- Applicant Address: TW Hsinchu
- Assignee: Vanguard International Semiconductor Corporation
- Current Assignee: Vanguard International Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
The invention provides a semiconductor structure. A first type body doped region is deposited on a first type substrate. A first type heavily-doped region having a finger portion with an enlarged end region is deposited on the first type body doped region. A second type well region is deposited on the first type substrate. A second type heavily-doped region is deposited on the second type well region. An isolation structure is deposited between the first type heavily-doped region and the second type heavily-doped region. A gate structure is deposited on the first type substrate between the first type heavily-doped region and the isolation structure.
Public/Granted literature
- US20100207207A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2010-08-19
Information query
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