Invention Grant
- Patent Title: Thin film encapsulation of MEMS devices
- Patent Title (中): MEMS器件的薄膜封装
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Application No.: US12648268Application Date: 2009-12-28
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Publication No.: US07875941B2Publication Date: 2011-01-25
- Inventor: Carl B. Freidhoff
- Applicant: Carl B. Freidhoff
- Applicant Address: US CA Los Angeles
- Assignee: Northrop Grumman Corporation
- Current Assignee: Northrop Grumman Corporation
- Current Assignee Address: US CA Los Angeles
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A method of manufacturing a miniature electromechanical system (MEMS) device includes the steps of forming a moving member on a first substrate such that a first sacrificial layer is disposed between the moving member and the substrate, encapsulating the moving member, including the first sacrificial layer, with a second sacrificial layer, coating the encapsulating second sacrificial layer with a first film formed of a material that establishes an hermetic seal with the substrate, and removing the first and second sacrificial layers.
Public/Granted literature
- US20100237446A1 THIN FILM ENCAPSULATION OF MEMS DEVICES Public/Granted day:2010-09-23
Information query
IPC分类:
