Provided is a semiconductor chip (1) including: at least one fuse element (21); a fuse opening (17) formed above the fuse element (21); and a discharge electrode (31) that is formed below a bottom portion (17a) of the fuse opening (17), and is formed in one of the same layer with the fuse element (21) and the above layer of the fuse element (21). Accordingly, the current caused to flow due to the electrostatic discharge generated at the time of assembling the semiconductor chip can be discharged through the discharge electrode (31). As a result, the current caused to flow due to the electrostatic discharge generated at the time of assembling the semiconductor chip can be prevented from being discharged through the fuse element, whereby a problem in that a functional failure occurs in the semiconductor chip can be solved.