Invention Grant
- Patent Title: Multilayered film having crystal grains grown at an inclination to a substrate, and magnetoresistive head using the film
- Patent Title (中): 具有以基板倾斜生长的晶粒的多层膜和使用该膜的磁阻头
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Application No.: US11784212Application Date: 2007-04-04
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Publication No.: US07876536B2Publication Date: 2011-01-25
- Inventor: Katsumi Hoshino , Hiroyuki Hoshiya , Kenichi Meguro , Yo Sato
- Applicant: Katsumi Hoshino , Hiroyuki Hoshiya , Kenichi Meguro , Yo Sato
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: GMG Intellectual Property Law
- Agent Guadalupe M. Garcia
- Priority: JP2006-103416 20060404
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
Embodiments of the present invention provides sufficiently high exchange coupling with a magnetic layer and improve the yield and reliability of a magnetoresistive head. By using a tilted growth crystalline structured antiferromagnetic film manufactured by an oblique incident deposition method, a high exchange coupling field with a ferromagnetic film can be obtained. As a result, excellent reliability and high output can be obtained in a magnetoresistive head utilizing features in accordance with embodiments of the present invention.
Public/Granted literature
- US20070274009A1 Multilayered film, producing method thereof, and magnetoresistive head using them Public/Granted day:2007-11-29
Information query
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