Invention Grant
US07876565B2 Method of obtaining enhanced localized thermal interface regions by particle stacking
有权
通过粒子堆积获得增强的局部热界面区域的方法
- Patent Title: Method of obtaining enhanced localized thermal interface regions by particle stacking
- Patent Title (中): 通过粒子堆积获得增强的局部热界面区域的方法
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Application No.: US12164576Application Date: 2008-06-30
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Publication No.: US07876565B2Publication Date: 2011-01-25
- Inventor: Nils D. Hoivik , Ryan Linderman
- Applicant: Nils D. Hoivik , Ryan Linderman
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Connolly Bove Lodge & Hutz LLP
- Agent Daniel P. Morris
- Main IPC: H05K7/20
- IPC: H05K7/20 ; H01L23/34 ; H01L21/00 ; F28F7/00

Abstract:
Integrated circuit-chip hot spot temperatures are reduced by providing localized regions of higher thermal conductivity in the conductive material interface at pre-designed locations by controlling how particles in the thermal paste stack- or pile-up during the pressing or squeezing of excess material from the interface. Nested channels are used to efficiently decrease the thermal resistance in the interface, by both allowing for the thermally conductive material with a higher particle volumetric fill to be used and by creating localized regions of densely packed particles between two surfaces.
Public/Granted literature
- US20090016028A1 METHOD OF OBTAINING ENHANCED LOCALIZED THERMAL INTERFACE REGIONS BY PARTICLE STACKING Public/Granted day:2009-01-15
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