Invention Grant
US07876597B2 NAND-structured series variable-resistance material memories, processes of forming same, and methods of using same
有权
NAND结构化系列可变电阻材料存储器，其形成方法及其使用方法
- Patent Title: NAND-structured series variable-resistance material memories, processes of forming same, and methods of using same
- Patent Title (中): NAND结构化系列可变电阻材料存储器，其形成方法及其使用方法
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Application No.: US11857647Application Date: 2007-09-19
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Publication No.: US07876597B2Publication Date: 2011-01-25
- Inventor: Jun Liu
- Applicant: Jun Liu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A variable-resistance material memory array includes a series of variable-resistance material memory cells. The series of variable-resistance material memory cells is in parallel with a corresponding series of control gates. A select gate is also in series with the variable-resistance material memory cells. Writing/reading/erasing to a given variable-resistance material memory cell includes turning off the corresponding control gate, while turning on all other control gates. Devices include the variable-resistance material memory array.
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