A data structure for a memory device is provided. The device includes an array having a plurality of rows of storage elements divided into logical units composed of a plurality of data structures. The data structure includes a data sector including user data and user attribute data. The user attribute data includes error correction coding (ECC) for the user data. The user attribute data includes information for other sectors in the logical unit. The data sector is provided in one of the plurality of rows having a higher degree of data integrity than others of said plurality of rows.