Invention Grant
- Patent Title: Substrate processing apparatus
- Patent Title (中): 基板加工装置
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Application No.: US11757151Application Date: 2007-06-01
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Publication No.: US07877895B2Publication Date: 2011-02-01
- Inventor: Takahisa Otsuka , Tsuyoshi Shibata
- Applicant: Takahisa Otsuka , Tsuyoshi Shibata
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-174695 20060626
- Main IPC: F26B19/00
- IPC: F26B19/00

Abstract:
A substrate processing method is arranged to perform a heat process on a substrate with a coating film formed thereon to bake and cure the coating film. At first, the substrate, with the coating film formed thereon, is held at a preparatory temperature lower than a lower limit of temperature for baking and curing the coating film, to adjust distribution of a predetermined component in the coating film. Then, the substrate, with distribution of the predetermined component thus adjusted, is subjected to a heat process at a temperature not lower than the lower limit of temperature.
Public/Granted literature
- US20070298188A1 SUBSTRATE PROCESSING METHOD AND APPARATUS Public/Granted day:2007-12-27
Information query
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