Invention Grant
- Patent Title: Dual frequency RF match
- Patent Title (中): 双频RF匹配
-
Application No.: US10823371Application Date: 2004-04-12
-
Publication No.: US07879185B2Publication Date: 2011-02-01
- Inventor: Steven C. Shannon , John Holland
- Applicant: Steven C. Shannon , John Holland
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser IP Law Group
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01L21/306 ; C23C16/00
Abstract:
A dual frequency matching circuit for plasma enhanced semiconductor processing chambers having dual frequency cathodes is provided. The matching circuit includes two matching circuits with variable shunts combined to a common output. The matching circuit balances the load of the independent RF sources to that of the plasma in the processing chamber during operation.
Public/Granted literature
- US20050133163A1 Dual frequency RF match Public/Granted day:2005-06-23
Information query
