Invention Grant
- Patent Title: Cathode for sputter coating
- Patent Title (中): 溅射镀膜阴极
-
Application No.: US11177465Application Date: 2005-07-08
-
Publication No.: US07879209B2Publication Date: 2011-02-01
- Inventor: Markus K. Tilsch , Georg J. Ockenfuss , Richard I. Seddon , Robert E. Hahn
- Applicant: Markus K. Tilsch , Georg J. Ockenfuss , Richard I. Seddon , Robert E. Hahn
- Applicant Address: US CA Milpitas
- Assignee: JDS Uniphase Corporation
- Current Assignee: JDS Uniphase Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Pequignot + Myers LLC
- Agent Matthew A. Pequignot
- Main IPC: C23C14/42
- IPC: C23C14/42

Abstract:
A magnetron sputtering cathode for use in a vacuum deposition process is disclosed wherein the cathode is coated on its sides with an electrically insulating material such as alumina to prevent arcing, and wherein the first end surface of the cathode supports a material to be sputtered. The bottom of the cathode may also be coated with an electrically insulating coating or may be resting upon an insulating platform.
Public/Granted literature
- US20060049042A1 Cathode for sputter coating Public/Granted day:2006-03-09
Information query
IPC分类: