Invention Grant
US07879250B2 Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection
有权
在具有独立晶片边缘工艺气体注入的等离子体反应器中处理工件的方法
- Patent Title: Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection
- Patent Title (中): 在具有独立晶片边缘工艺气体注入的等离子体反应器中处理工件的方法
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Application No.: US11899613Application Date: 2007-09-05
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Publication No.: US07879250B2Publication Date: 2011-02-01
- Inventor: Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
- Applicant: Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Law Office of Robert M. Wallace
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00
Abstract:
The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.
Public/Granted literature
- US20090057269A1 Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection Public/Granted day:2009-03-05
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