Invention Grant
US07879398B2 Carbon-nano tube structure, method of manufacturing the same, and field emitter and display device each adopting the same 失效
碳纳米管结构及其制造方法,以及场发射器和显示装置各自采用

  • Patent Title: Carbon-nano tube structure, method of manufacturing the same, and field emitter and display device each adopting the same
  • Patent Title (中): 碳纳米管结构及其制造方法,以及场发射器和显示装置各自采用
  • Application No.: US10929381
    Application Date: 2004-08-31
  • Publication No.: US07879398B2
    Publication Date: 2011-02-01
  • Inventor: Ha-Jin KimIn-Taek Han
  • Applicant: Ha-Jin KimIn-Taek Han
  • Applicant Address: KR Gongse-dong, Giheung-gu, Yongin-si, Gyeonggi-do
  • Assignee: Samsung SDI Co., Ltd.
  • Current Assignee: Samsung SDI Co., Ltd.
  • Current Assignee Address: KR Gongse-dong, Giheung-gu, Yongin-si, Gyeonggi-do
  • Agent Robert E. Bushnell, Esq.
  • Priority: KR10-2003-0060753 20030901
  • Main IPC: C23C16/00
  • IPC: C23C16/00
Carbon-nano tube structure, method of manufacturing the same, and field emitter and display device each adopting the same
Abstract:
A carbon-nano tube (CNT) structure comprises a substrate and a plurality of CNTs, each CNT comprising a plurality of first CNTs grown perpendicular to the substrate and a plurality of second CNTs grown on sidewalls of the first CNTs. A method of manufacturing CNTs includes growing first CNTs on a substrate on which a catalyst material layer is formed, and growing second CNTs on surfaces of the first CNTs from a catalyst material on surfaces of the first CNTs. The second CNTs grown on the sidewalls of the first CNTs emit electrons at a low voltage. In addition, the CNT structure exhibits high electron emission current due to the second CNTs being used as electron emission sources, and exhibits uniform field emission due to the uniform diameter of the first CNTs. A display device incorporates the above-described structure.
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