Invention Grant
- Patent Title: CV method using metal carbonyl gas
- Patent Title (中): 使用金属羰基气体的CV方法
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Application No.: US12193370Application Date: 2008-08-18
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Publication No.: US07879399B2Publication Date: 2011-02-01
- Inventor: Tatsuo Hatano , Hideaki Yamasaki
- Applicant: Tatsuo Hatano , Hideaki Yamasaki
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2002-322924 20021106
- Main IPC: C23C16/16
- IPC: C23C16/16

Abstract:
A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired.
Public/Granted literature
- US20080311297A1 CVD METHOD USING METAL CARBONYL GAS AND COMPUTER STORAGE MEDIUM STORING PROGRAM FOR CONTROLLING SAME Public/Granted day:2008-12-18
Information query
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