Invention Grant
US07879400B2 Substrate processing apparatus, method of manufacturing a semiconductor device, and method of forming a thin film on metal surface
有权
基板处理装置，制造半导体装置的方法以及在金属表面上形成薄膜的方法
- Patent Title: Substrate processing apparatus, method of manufacturing a semiconductor device, and method of forming a thin film on metal surface
- Patent Title (中): 基板处理装置，制造半导体装置的方法以及在金属表面上形成薄膜的方法
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Application No.: US11907270Application Date: 2007-10-10
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Publication No.: US07879400B2Publication Date: 2011-02-01
- Inventor: Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki
- Applicant: Takahiro Maeda , Kiyohiko Maeda , Takashi Ozaki
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusal Electric Inc.
- Current Assignee: Hitachi Kokusal Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2006-276336 20061010; JP2007-198082 20070730
- Main IPC: C23C16/00
- IPC: C23C16/00
Abstract:
There is provided a substrate processing apparatus equipped with a metallic component, with at least a part of its metallic surface exposed to an inside of a processing chamber and subjected to baking treatment at a pressure less than atmospheric pressure. As a result of this baking treatment, a film which does not react with various types of reactive gases, and which can block the out diffusion of metals, is formed on the surface of the above-mentioned metallic component.
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