Invention Grant
- Patent Title: Photomask, manufacturing method thereof, and electronic device manufacturing method
- Patent Title (中): 光掩模，其制造方法和电子器件制造方法
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Application No.: US12018495Application Date: 2008-01-23
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Publication No.: US07879512B2Publication Date: 2011-02-01
- Inventor: Kanji Takeuchi
- Applicant: Kanji Takeuchi
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Main IPC: G03F1/00
- IPC: G03F1/00 ; H01L21/00
Abstract:
A photomask includes a transparent substrate and an opaque film formed on the transparent substrate. The opaque film is configured to form a device pattern with which a wafer is to be exposed; and at least one pair of assist patterns is formed by the opaque film, one assist pattern on each side of the device pattern on the transparent substrate. The size of each assist pattern of the pair of assist patterns is such that the assist pattern is not resolved on the wafer. A part of each assist pattern of the pair of assist patterns includes step portions.
Public/Granted literature
- US20080118850A1 PHOTOMASK, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE MANUFACTURING METHOD Public/Granted day:2008-05-22
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