Invention Grant
US07879536B2 Method for forming high-resolution pattern having desired thickness or high aspect ratio using dry film resist
有权
使用干膜抗蚀剂形成具有期望厚度或高纵横比的高分辨率图案的方法
- Patent Title: Method for forming high-resolution pattern having desired thickness or high aspect ratio using dry film resist
- Patent Title (中): 使用干膜抗蚀剂形成具有期望厚度或高纵横比的高分辨率图案的方法
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Application No.: US11612917Application Date: 2006-12-19
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Publication No.: US07879536B2Publication Date: 2011-02-01
- Inventor: Dong-Youn Shin , Dong-Soo Kim , So-Nam Yun , Young-Bog Ham , Byung-Oh Choi
- Applicant: Dong-Youn Shin , Dong-Soo Kim , So-Nam Yun , Young-Bog Ham , Byung-Oh Choi
- Applicant Address: KR
- Assignee: Korea Institute of Machinery & Materials
- Current Assignee: Korea Institute of Machinery & Materials
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2006-0039982 20060503
- Main IPC: G03F7/26
- IPC: G03F7/26

Abstract:
Disclosed herein is a method for forming a pattern, comprising: attaching a single-layer or multi-layer dry film resist made of a semi-solid or solid material to part or all of the surface of a substrate; exposing the dry film resist to light either by irradiating a focusable energy beam directly onto the resist or by projecting a specific wavelength range of light onto the resist, to form a region to be filled with a functional material; charging the functional material into the formed region using a method such as inkjetting; drying the functional material; and removing the dry film resist, thus obtaining the desired pattern.
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