Invention Grant
- Patent Title: Method and device to reduce dark current in image sensors
- Patent Title (中): 降低图像传感器暗电流的方法和装置
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Application No.: US11735226Application Date: 2007-04-13
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Publication No.: US07879639B2Publication Date: 2011-02-01
- Inventor: Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
- Applicant: Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.
Public/Granted literature
- US20080251821A1 METHOD AND DEVICE TO REDUCE DARK CURRENT IN IMAGE SENSORS Public/Granted day:2008-10-16
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