Invention Grant
- Patent Title: Solid-state sensor and manufacturing method thereof
- Patent Title (中): 固体传感器及其制造方法
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Application No.: US11763532Application Date: 2007-06-15
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Publication No.: US07879642B2Publication Date: 2011-02-01
- Inventor: Hidetoshi Shimada , Karuya Mori
- Applicant: Hidetoshi Shimada , Karuya Mori
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent John J. Patti; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Priority: JP2006-166719 20060615
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A sensor having photodiodes whose sensitivity and storage capacity can be increased is provided. The sensor is formed by arranging the photodiodes in an array with first region of second conductivity type is formed on the principal surface of a substrate of a first conductivity type. A pixel separating region of the first conductivity type is formed to penetrate through the first semiconductor region to separate the regions of the adjacent photodiodes. A second region of the second conductivity type used to drain excess charge is formed in substrate at a position away from the junction surface between substrate and the first region and below the junction surface.
Public/Granted literature
- US20070290285A1 SEMICONDUCTOR DEVICE, SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2007-12-20
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