Invention Grant
- Patent Title: Semiconductor module
- Patent Title (中): 半导体模块
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Application No.: US11828858Application Date: 2007-07-26
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Publication No.: US07879652B2Publication Date: 2011-02-01
- Inventor: Ralf Otremba , Josef Hoeglauer , Klaus Schiess
- Applicant: Ralf Otremba , Josef Hoeglauer , Klaus Schiess
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A semiconductor module is disclosed. One embodiment provides a first semiconductor chip having a first contact pad on a first main surface and a second contact pad on a second main surface, a first electrically conductive layer applied to the first main surface, a second electrically conductive layer applied to the second main surface, and an electrically insulating material covering the first electrically conductive layer, wherein a surface of the second electrically conductive layer forms an external contact pad and the second electrically conductive layer has a thickness of less than 200 μm.
Public/Granted literature
- US20090026601A1 SEMICONDUCTOR MODULE Public/Granted day:2009-01-29
Information query
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