Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US11155610Application Date: 2005-06-20
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Publication No.: US07879657B2Publication Date: 2011-02-01
- Inventor: Hidetsugu Uchida
- Applicant: Hidetsugu Uchida
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Volentine & Whitt, P.L.L.C.
- Priority: JP2004-297072 20041012
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/335
Abstract:
An insulating film layer is formed between a channel region of an MOS element formed in a monocrystal silicon layer of an SOS substrate in which the monocrystal silicon layer is laminated on a sapphire substrate, and the sapphire substrate, thereby to bring a stress state of the monocrystal silicon layer on the insulating film layer into a tensile stress state.
Public/Granted literature
- US20060079031A1 Semiconductor device and manufacturing method thereof Public/Granted day:2006-04-13
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