Invention Grant
- Patent Title: Semiconductor resistor formed in metal gate stack
- Patent Title (中): 半导体电阻器形成在金属栅极堆叠中
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Application No.: US12177986Application Date: 2008-07-23
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Publication No.: US07879666B2Publication Date: 2011-02-01
- Inventor: Da Zhang , Chendong Zhu , Xiangdong Chen , Melanie Sherony
- Applicant: Da Zhang , Chendong Zhu , Xiangdong Chen , Melanie Sherony
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Hamilton & Terrile, LLP
- Agent Michael Rocco Cannatti
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8234
Abstract:
A semiconductor process and apparatus fabricate a metal gate electrode (30) and an integrated semiconductor resistor (32) by forming a metal-based layer (26) and semiconductor layer (28) over a gate dielectric layer (24) and then selectively implanting the resistor semiconductor layer (28) in a resistor area (97) to create a conductive upper region (46) and a conduction barrier (47), thereby confining current flow in the resistor semiconductor layer (36) to only the top region (46) in the finally formed device.
Public/Granted literature
- US20100019328A1 Semiconductor Resistor Formed in Metal Gate Stack Public/Granted day:2010-01-28
Information query
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