Invention Grant
- Patent Title: Method of fabricating a microelectronic structure of a semiconductor on insulator type with different patterns
- Patent Title (中): 制造具有不同图案的绝缘体半导体微电子结构的方法
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Application No.: US12413130Application Date: 2009-03-27
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Publication No.: US07879690B2Publication Date: 2011-02-01
- Inventor: Emmanuel Augendre , Thomas Ernst , Marek Kostrzewa , Hubert Moriceau
- Applicant: Emmanuel Augendre , Thomas Ernst , Marek Kostrzewa , Hubert Moriceau
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Brinks Hofer Gilson & Lione
- Priority: FR0852106 20080331
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
A microstructure of the semiconductor on insulator type with different patterns is produced by forming a stacked uniform structure including a plate forming a substrate, a continuous insulative layer and a semiconductor layer. The continuous insulative layer is a stack of at least three elementary layers, including a bottom elementary layer, at least one intermediate elementary layer, and a top elementary layer overlying the semiconductor layer, where at least one of the bottom elementary layer and the top elementary layer being of an insulative material. In the stacked uniform structure, at least two patterns are differentiated by modifying at least one of the elementary layers in one of the patterns so that the elementary layer has a significantly different physical or chemical property between the two patterns, where at least one of the bottom and top elementary layer is an insulative material that remains unchanged.
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